Semiconductor Component Analyzer Tool Features Automatic component type identification Automatic pinout identification Special feature identification such as protection diodes and resistor shunts Bipolar transistors: gain and leakage current measurements, silicon and germanium detection Gate threshold measurement for Enhancement Mode MOSFETs Semiconductor forward voltage measurement for diodes, LEDs and transistor Base-Emitter junctions Automatic and manual power-off Specifications Specification Summary at 20C (68F) unless otherwise specified Peak test current into short circuit: -5.5 mA to 5.5 mA Peak test voltage across open circuit: -5.1 V to 5.1 V Transistor: Gain range (Hfe): 4 - 65,000 Gain accuracy: A 3% A 5 Hfe Vceo test voltage: 2.0 V - 3.0 V Vbe accuracy: -2% -20 mV to 2% 20 mV VBE for Darlington (shunted): 0.95 V - 1.80 V (0.75 V - 1.80 V) Base-emitter shunt threshold: 50 k - 70 k BJT collector test current: 2.45 mA - 2.55 mA BJT acceptable leakage: 0.7 mA MOSFET: Gate threshold range: 0.1 V - 5.0 V Threshold accuracy: -2% -20 mV to 2% 20 mV Drain test current: 2.45 mA - 255 mA Gate resistance: 8 k Depletion drain test current: 4.5 mA JFET drain-source test current: 0.5 mA - 5.5 mA SCR/Triac: Gate test current: 4.5 mA Load test current: 5.0 mA Diode: Test current: 5.0 mA Voltage accuracy: -2% -20 mV to 2% 20 mV Vf for LED identification: 1.50 V - 4.00 V Short circuit threshold: 10 Battery: Type: MN21 / L1028 / GP23A 12 V alkaline Voltage range: 7.50 V - 12 V Warning threshold: 8.25 V Dimensions: 103 x 70 x 20 mm (4.1" x 2.8" x 0.8") Weight per product (nett): 0.098kg (3.5oz) Operating temperature range: 0C to 50C (32F to 122F)
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